完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 汪大暉 | en_US |
dc.contributor.author | WANG TAHUI | en_US |
dc.date.accessioned | 2014-12-13T10:33:38Z | - |
dc.date.available | 2014-12-13T10:33:38Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.govdoc | NSC92-2215-E009-024 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/92178 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=873444&docId=167328 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 超薄閘極氧化層CMOS元件軟崩潰效應研究(II) | zh_TW |
dc.title | In-Depth Study of Soft Breakdown Effects in Ultra-Thin Oxide CMOS (II) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子工程學系 | zh_TW |
顯示於類別: | 研究計畫 |