Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 王興宗 | en_US |
dc.contributor.author | WANG SHING CHUNG | en_US |
dc.date.accessioned | 2014-12-13T10:33:53Z | - |
dc.date.available | 2014-12-13T10:33:53Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.govdoc | NSC92-2215-E009-015 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/92346 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=844033&docId=159937 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 氮化鎵材料製程開發及元件製作(III) | zh_TW |
dc.title | GaN-Based Fabrication Process Development and Device Fabrication (III) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學光電工程研究所 | zh_TW |
Appears in Collections: | Research Plans |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.