Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention

doi:10.1109/LED.2010.2100019

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DC Field	Value	Language
dc.contributor.author	Tsai, C. Y.	en_US
dc.contributor.author	Lee, T. H.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:12:03Z	-
dc.date.available	2014-12-08T15:12:03Z	-
dc.date.issued	2011-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2010.2100019	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9240	-
dc.description.abstract	We have fabricated the TaN-[SiO(2)-LaAlO(3)]-HfON-[LaAlO(3)-SiO(2)]-Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 degrees C, and a 5.5-V endurance window at 10(6) cycles were measured under very fast 100-mu s and low +/- 16-V program/erase. These excellent results were achieved using an As(+) implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.	en_US
dc.language.iso	en_US	en_US
dc.subject	Charge-trapping Flash (CTF)	en_US
dc.subject	HfON	en_US
dc.subject	ion implant	en_US
dc.subject	nonvolatile memory (NVM)	en_US
dc.title	Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2010.2100019	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	32	en_US
dc.citation.issue	3	en_US
dc.citation.spage	381	en_US
dc.citation.epage	383	en_US
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000287658400053	-
dc.citation.woscount	6	-
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