超薄閘極氧化層CMOS元件軟崩潰效應研究(I)

Full metadata record

DC Field	Value	Language
dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.date.accessioned	2014-12-13T10:34:14Z	-
dc.date.available	2014-12-13T10:34:14Z	-
dc.date.issued	2002	en_US
dc.identifier.govdoc	NSC91-2215-E009-049	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/92610	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=784421&docId=150775	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	超薄閘極氧化層CMOS元件軟崩潰效應研究(I)	zh_TW
dc.title	In-Depth Study of Soft Breakdown Effects in Ultra-Thin Oxide CMOS (I)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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