以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(III)

標題:	以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(III) Fabrication and Reliability of Ultra-Thin Gate Dielectrics by ECR-CVD Technique (III)
作者:	張國明 CHANG KOW-MING 交通大學電子工程系
公開日期:	2002
官方說明文件#:	NSC91-2215-E009-014
URI:	http://hdl.handle.net/11536/92719 https://www.grb.gov.tw/search/planDetail?id=736708&docId=139404
Appears in Collections:	Research Plans

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