應用在Ku波段之氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析

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DC Field	Value	Language
dc.contributor.author	張翼	en_US
dc.date.accessioned	2014-12-13T10:34:28Z	-
dc.date.available	2014-12-13T10:34:28Z	-
dc.date.issued	2002	en_US
dc.identifier.govdoc	NSC91-2215-E009-036	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/92767	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=784374&docId=150762	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	應用在Ku波段之氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析	zh_TW
dc.title	High Power Electronic Devices Fabrication and High Frequency Characterization of Gallium Nitride Based Compound Semiconductors for Ku Band	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學材料科學與工程系	zh_TW
Appears in Collections:	Research Plans

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