一種新式氮化矽快閃式記憶元件研究(II)

標題:	一種新式氮化矽快閃式記憶元件研究(II) Physics, Characterization and Design of Oxide-Nitride-Oxide Flash EEPROM Devices (II)
作者:	汪大暉 WANG TAHUI 交通大學電子工程系
公開日期:	2002
官方說明文件#:	NSC91-2215-E009-019
URI:	http://hdl.handle.net/11536/93183 https://www.grb.gov.tw/search/planDetail?id=736725&docId=139409
Appears in Collections:	Research Plans

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