等價位氮化物元件結構製備與相關物理特性研究(II)

標題:	等價位氮化物元件結構製備與相關物理特性研究(II) Characterizations and Fabrications of Isoelectronic Doped Nitride Device Structures(II)
作者:	陳衛國 WEI-KUOCHEN 交通大學電子物理系
公開日期:	2002
官方說明文件#:	NSC91-2112-M009-038
URI:	http://hdl.handle.net/11536/93198 https://www.grb.gov.tw/search/planDetail?id=748745&docId=142120
Appears in Collections:	Research Plans

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