| 標題: | 光資訊關鍵性材料製程與性質研究---子計畫V：用晶圓接合與溼式蝕刻方式來剝離側向覆蓋生長之氮化鎵磊晶層(I) Lift off GaN Epitaxy Lateral Overgrowth Layer by Wafer Bonding and Wet Etching Methods (I) |
| 作者: | 吳耀銓 YEWCHUNG SERMONWU 交通大學材料科學與工程系 |
| 公開日期: | 2002 |
| 官方說明文件#: | NSC91-2216-E009-026 |
| URI: | http://hdl.handle.net/11536/93348 https://www.grb.gov.tw/search/planDetail?id=785516&docId=151057 |
| Appears in Collections: | Research Plans |
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