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dc.contributor.author張國明en_US
dc.contributor.authorCHANG KOW-MINGen_US
dc.date.accessioned2014-12-13T10:35:29Z-
dc.date.available2014-12-13T10:35:29Z-
dc.date.issued2001en_US
dc.identifier.govdocNSC90-2215-E009-104zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/93462-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=665801&docId=126398en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject超薄閘極zh_TW
dc.subject可靠度zh_TW
dc.subject電子迴旋共振zh_TW
dc.subject化學氣相沈積法zh_TW
dc.subject介電薄膜zh_TW
dc.subjectUltra-thin gateen_US
dc.subjectReliabilityen_US
dc.subjectElectron cyclotron resonanceen_US
dc.subjectChemical vapor deposition (CVD)en_US
dc.subjectDielectric thin filmen_US
dc.title以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(II)zh_TW
dc.titleFabrication and Reliability of Ultra-Thin Gate Dielectrics by ECR-CVD Technique (II)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
Appears in Collections:Research Plans


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