以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(II)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張國明	en_US
dc.contributor.author	CHANG KOW-MING	en_US
dc.date.accessioned	2014-12-13T10:35:29Z	-
dc.date.available	2014-12-13T10:35:29Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-104	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93462	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665801&docId=126398	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	超薄閘極	zh_TW
dc.subject	可靠度	zh_TW
dc.subject	電子迴旋共振	zh_TW
dc.subject	化學氣相沈積法	zh_TW
dc.subject	介電薄膜	zh_TW
dc.subject	Ultra-thin gate	en_US
dc.subject	Reliability	en_US
dc.subject	Electron cyclotron resonance	en_US
dc.subject	Chemical vapor deposition (CVD)	en_US
dc.subject	Dielectric thin film	en_US
dc.title	以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(II)	zh_TW
dc.title	Fabrication and Reliability of Ultra-Thin Gate Dielectrics by ECR-CVD Technique (II)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
顯示於類別：	研究計畫