標題: 超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---總計畫 (III)
Study of UHVCVD Deposited Poly-Si TFTs with Low Temperature Gate Dielectric and Novel Structure(III)
作者: 張俊彥
CHANG CHUN-YEN
國立交通大學電子工程學系
公開日期: 2000
官方說明文件#: NSC89-2218-E009-087
URI: http://hdl.handle.net/11536/93463
https://www.grb.gov.tw/search/planDetail?id=597417&docId=112582
Appears in Collections:Research Plans


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