氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析

標題:	氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析 High Power Electronic Devices Fabrication and High Frequency Characterization of Gallium Nitride Based Compound Semiconductors
作者:	張翼國立交通大學材料科學與工程學系
關鍵字:	氮化鎵族半導體;高功率電子元件;高頻;GaN semiconductor;High power electronic device;High frequency
公開日期:	2001
官方說明文件#:	NSC90-2215-E009-103
URI:	http://hdl.handle.net/11536/93649 https://www.grb.gov.tw/search/planDetail?id=660685&docId=125043
Appears in Collections:	Research Plans

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