Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ma, Ming-Wen | en_US |
dc.contributor.author | Chen, Chih-Yang | en_US |
dc.contributor.author | Wu, Woei-Cherrig | en_US |
dc.contributor.author | Su, Chun-Jung | en_US |
dc.contributor.author | Kao, Kuo-Hsing | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.contributor.author | Lei, Tan-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:12:13Z | - |
dc.date.available | 2014-12-08T15:12:13Z | - |
dc.date.issued | 2008-05-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2008.919710 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9374 | - |
dc.description.abstract | In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO2 gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO2 gate dielectric is observed for the PBS and PBTI of the HfO2 LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO2 LTPS-TFT. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | HfO2 gate dielectric | en_US |
dc.subject | hot-carrier stress (HCS) | en_US |
dc.subject | low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) | en_US |
dc.subject | negative-bias temperature instability (NBTI) | en_US |
dc.subject | positive-bias temperature instability (PBTI) | en_US |
dc.subject | reliability | en_US |
dc.title | Reliability mechanisms of LTPS-TFT with HfO2 gate dielectric: PBTI, NBTI, and hot-carrier stress | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2008.919710 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 55 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 1153 | en_US |
dc.citation.epage | 1160 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000255317900008 | - |
dc.citation.woscount | 13 | - |
Appears in Collections: | Articles |
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