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dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorChen, Chih-Yangen_US
dc.contributor.authorWu, Woei-Cherrigen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorKao, Kuo-Hsingen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:12:13Z-
dc.date.available2014-12-08T15:12:13Z-
dc.date.issued2008-05-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2008.919710en_US
dc.identifier.urihttp://hdl.handle.net/11536/9374-
dc.description.abstractIn this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO2 gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO2 gate dielectric is observed for the PBS and PBTI of the HfO2 LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO2 LTPS-TFT.en_US
dc.language.isoen_USen_US
dc.subjectHfO2 gate dielectricen_US
dc.subjecthot-carrier stress (HCS)en_US
dc.subjectlow-temperature polycrystalline-Si thin-film transistor (LTPS-TFT)en_US
dc.subjectnegative-bias temperature instability (NBTI)en_US
dc.subjectpositive-bias temperature instability (PBTI)en_US
dc.subjectreliabilityen_US
dc.titleReliability mechanisms of LTPS-TFT with HfO2 gate dielectric: PBTI, NBTI, and hot-carrier stressen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2008.919710en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume55en_US
dc.citation.issue5en_US
dc.citation.spage1153en_US
dc.citation.epage1160en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000255317900008-
dc.citation.woscount13-
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