利用電荷幫浦分佈法研究深次微米N型MOS元件電漿製程傷害之可靠性

Full metadata record

DC Field	Value	Language
dc.contributor.author	莊紹勳	en_US
dc.contributor.author	Chung Steve S	en_US
dc.date.accessioned	2014-12-13T10:36:04Z	-
dc.date.available	2014-12-13T10:36:04Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-107	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93759	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=583902&docId=109710	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	利用電荷幫浦分佈法研究深次微米N型MOS元件電漿製程傷害之可靠性	zh_TW
dc.title	Charge pumping Profiling Technique for Reliability Analysis of Plasma Induced Damage in Deep-submicron n-MOSFETs	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程研究所	zh_TW
Appears in Collections:	Research Plans

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