| 标题: | 砷化镓功率电晶体铜金属化制程可行性之研究 The Feasibility Study of Copper Metallization for GaAs Power MESFET Devices |
| 作者: | 张翼 国立交通大学材料科学与工程学系 |
| 公开日期: | 2000 |
| 官方说明文件#: | NSC89-2215-E009-111 |
| URI: | http://hdl.handle.net/11536/93772 https://www.grb.gov.tw/search/planDetail?id=583915&docId=109713 |
| 显示于类别： | Research Plans |
- The performance of GaAs power MESFET's using backside copper metallization / Chen, CY;Chang, L;Chang, EY;Chen, SH;Lin, YC
- Backside copper metallization of GaAs MESFET's using Ta and TaN as diffusion barrier / Chang, EY;Chen, CY;Chang, L;Chen, SH
- Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier / Chen, CY;Chang, EY;Chang, L;Chen, SH
- 砷化镓功率金属半导体场效电晶体铜金属化之研究 / 陈长有;Chang-You Chen;张 立;Li Chang
- 高崩溃电压磷化铟镓通道场效电晶体之研发 / 陈世宏;S. H. Chen;张翼;Dr. Edward Y. Chang
- SPDT GaAs switches with copper metallized interconnects / Wu, Y. C.;Chang, E. Y.;Lin, Y. C.;Hsu, H. T.;Chen, S. H.
- 具有光化学气相沈积及电浆加强化学气相沈积氮化矽保护层之砷化镓功率金属半导体场效电晶体之研究 / 林文中;Lin, Wen Chung;张翼;Edward Y. Chang
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