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dc.contributor.authorWang, Kuan-Tien_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorWu, Woei-Cherngen_US
dc.contributor.authorLai, Chao-Sungen_US
dc.date.accessioned2014-12-08T15:02:15Z-
dc.date.available2014-12-08T15:02:15Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-1656-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/941-
dc.description.abstract2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.en_US
dc.language.isoen_USen_US
dc.titleThe polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memoryen_US
dc.typeProceedings Paperen_US
dc.identifier.journalMTTD 2007 TAIPEI: PROCEEDINGS OF 2007 IEEE INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN, AND TESTING (MTD '07)en_US
dc.citation.spage51en_US
dc.citation.epage54en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000257508500010-
Appears in Collections:Conferences Paper