標題: The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory
作者: Wang, Kuan-Ti
Chao, Tien-Sheng
Wu, Woei-Cherng
Lai, Chao-Sung
電子物理學系
Department of Electrophysics
公開日期: 2008
摘要: 2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.
URI: http://hdl.handle.net/11536/941
ISBN: 978-1-4244-1656-1
期刊: MTTD 2007 TAIPEI: PROCEEDINGS OF 2007 IEEE INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN, AND TESTING (MTD '07)
起始頁: 51
結束頁: 54
Appears in Collections:Conferences Paper