The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, Kuan-Ti	en_US
dc.contributor.author	Chao, Tien-Sheng	en_US
dc.contributor.author	Wu, Woei-Cherng	en_US
dc.contributor.author	Lai, Chao-Sung	en_US
dc.date.accessioned	2014-12-08T15:02:15Z	-
dc.date.available	2014-12-08T15:02:15Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-1656-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/941	-
dc.description.abstract	2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.	en_US
dc.language.iso	en_US	en_US
dc.title	The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	MTTD 2007 TAIPEI: PROCEEDINGS OF 2007 IEEE INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN, AND TESTING (MTD '07)	en_US
dc.citation.spage	51	en_US
dc.citation.epage	54	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000257508500010	-
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