離子佈植技術在淺接面製作及介電材料後處理之應用

Full metadata record

DC Field	Value	Language
dc.contributor.author	曾堅信	en_US
dc.date.accessioned	2014-12-13T10:36:56Z	-
dc.date.available	2014-12-13T10:36:56Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E317-006	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94269	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=418159&docId=74178	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	離子佈置	zh_TW
dc.subject	淺接面	zh_TW
dc.subject	介電材料	zh_TW
dc.subject	隨機存取記憶體	zh_TW
dc.subject	洩漏電流	zh_TW
dc.subject	分凝	zh_TW
dc.subject	Ion implantation	en_US
dc.subject	Shallow junction	en_US
dc.subject	Dielectric material	en_US
dc.subject	DRAM	en_US
dc.subject	Leakage current	en_US
dc.subject	Segregation	en_US
dc.title	離子佈植技術在淺接面製作及介電材料後處理之應用	zh_TW
dc.title	Applications of Ion Implantation on the Fabrication of Shallow Junctions and the Post-treatment of Dielectric Materials	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學毫微米實驗室	zh_TW
Appears in Collections:	Research Plans