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dc.contributor.author曾堅信en_US
dc.date.accessioned2014-12-13T10:36:56Z-
dc.date.available2014-12-13T10:36:56Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E317-006zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94269-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=418159&docId=74178en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject離子佈置zh_TW
dc.subject淺接面zh_TW
dc.subject介電材料zh_TW
dc.subject隨機存取記憶體zh_TW
dc.subject洩漏電流zh_TW
dc.subject分凝zh_TW
dc.subjectIon implantationen_US
dc.subjectShallow junctionen_US
dc.subjectDielectric materialen_US
dc.subjectDRAMen_US
dc.subjectLeakage currenten_US
dc.subjectSegregationen_US
dc.title離子佈植技術在淺接面製作及介電材料後處理之應用zh_TW
dc.titleApplications of Ion Implantation on the Fabrication of Shallow Junctions and the Post-treatment of Dielectric Materialsen_US
dc.typePlanen_US
dc.contributor.department國立交通大學毫微米實驗室zh_TW
Appears in Collections:Research Plans