完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 吳世全 | en_US |
dc.contributor.author | WU SHICH-CHUAN | en_US |
dc.date.accessioned | 2014-12-13T10:36:56Z | - |
dc.date.available | 2014-12-13T10:36:56Z | - |
dc.date.issued | 1999 | en_US |
dc.identifier.govdoc | NSC88-2215-E317-007 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/94273 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=418231&docId=74196 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 化學氣相沈積法 | zh_TW |
dc.subject | 銅金屬連線 | zh_TW |
dc.subject | 化學機械研磨 | zh_TW |
dc.subject | 填塞率 | zh_TW |
dc.subject | 覆蓋率 | zh_TW |
dc.subject | 極大型積體電路 | zh_TW |
dc.subject | CVD | en_US |
dc.subject | Copper metal interconnection | en_US |
dc.subject | Chemical mechanical polishing | en_US |
dc.subject | Filling rate | en_US |
dc.subject | Conformality | en_US |
dc.subject | ULSI | en_US |
dc.title | 化學氣相沈積銅金屬之覆蓋率及填塞率之技術研究 | zh_TW |
dc.title | Improving of Technology of Step Coverage and Filling Rate of CVD-Cu Metal in IC Fabrication | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學毫微米實驗室 | zh_TW |
顯示於類別: | 研究計畫 |