薄閘氧化層深次微米n-MOS元件的熱載子可靠性分析

Full metadata record

DC Field	Value	Language
dc.contributor.author	莊紹勳	en_US
dc.contributor.author	Chung Steve S	en_US
dc.date.accessioned	2014-12-13T10:37:00Z	-
dc.date.available	2014-12-13T10:37:00Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-041	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94333	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=418054&docId=74156	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	熱載子	zh_TW
dc.subject	可靠度	zh_TW
dc.subject	氧化層	zh_TW
dc.subject	金氧半場效電晶體	zh_TW
dc.subject	深次微米	zh_TW
dc.subject	洩漏電流	zh_TW
dc.subject	Hot carrier	en_US
dc.subject	Reliability	en_US
dc.subject	Oxided larger	en_US
dc.subject	MOSFET	en_US
dc.subject	Deep submicrometer	en_US
dc.subject	Leakage current	en_US
dc.title	薄閘氧化層深次微米n-MOS元件的熱載子可靠性分析	zh_TW
dc.title	Analysis of Hot Carrier Reliability for Thin Gate Oxide Deep-Submicron nMOSFET's	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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