薄閘氧化層深次微米n-MOS元件的熱載子可靠性分析

標題:	薄閘氧化層深次微米n-MOS元件的熱載子可靠性分析 Analysis of Hot Carrier Reliability for Thin Gate Oxide Deep-Submicron nMOSFET's
作者:	莊紹勳 Chung Steve S 交通大學電子工程系
關鍵字:	熱載子;可靠度;氧化層;金氧半場效電晶體;深次微米;洩漏電流;Hot carrier;Reliability;Oxided larger;MOSFET;Deep submicrometer;Leakage current
公開日期:	1999
官方說明文件#:	NSC88-2215-E009-041
URI:	http://hdl.handle.net/11536/94333 https://www.grb.gov.tw/search/planDetail?id=418054&docId=74156
Appears in Collections:	Research Plans

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