P通道快閃式記憶元件在長時間寫入抹除後由熱載子導致的可靠性問題研究

標題:	P通道快閃式記憶元件在長時間寫入抹除後由熱載子導致的可靠性問題研究 Hot Carrier Induced Reliability Issues in P-channel Flash Memory after Long Term P/E Cycles
作者:	莊紹勳 Chung Steve S 交通大學電子工程系
關鍵字:	快閃式記憶體;熱載子;可靠度;氧化層;耐久性;擾動;Flash memory;Hot carrier;Reliability;Oxided layer;Endurance;Disturbance
公開日期:	1999
官方說明文件#:	NSC88-2215-E009-040
URI:	http://hdl.handle.net/11536/94338 https://www.grb.gov.tw/search/planDetail?id=418050&docId=74155
Appears in Collections:	Research Plans

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