介電層之化學機械拋光漿料與製程設計---子計畫III：積體電路製程中介電層薄膜之材料特性與化學機械拋光之研究

標題:	介電層之化學機械拋光漿料與製程設計---子計畫III：積體電路製程中介電層薄膜之材料特性與化學機械拋光之研究 Materials Characteristics and Chemical-Mechanical Polishing Process of Inter-Layer Dielectric Thin Films for Integrated Circuits Fabrication
作者:	曾偉志交通大學材料科學與工程系
關鍵字:	化學機械拋光法;介電質內薄膜;極大型積體電路;Chemical-mechanical polishing (CMP);Intern layer dielectrics (ILD);Ultra large scaling integration (ULSI)
公開日期:	1999
官方說明文件#:	NSC88-2216-E006-046
URI:	http://hdl.handle.net/11536/94342 https://www.grb.gov.tw/search/planDetail?id=418291&docId=74210
Appears in Collections:	Research Plans

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