電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	林鴻志	en_US
dc.contributor.author	HORNG-CHIHLIN	en_US
dc.date.accessioned	2014-12-13T10:37:06Z	-
dc.date.available	2014-12-13T10:37:06Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E317-005	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94383	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=428978&docId=76777	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	天線效應	zh_TW
dc.subject	電漿製程	zh_TW
dc.subject	超薄閘	zh_TW
dc.subject	氧化層	zh_TW
dc.subject	充電損害	zh_TW
dc.subject	深次微米	zh_TW
dc.subject	光阻	zh_TW
dc.subject	灰化	zh_TW
dc.subject	Antenna effect	en_US
dc.subject	Plasma process	en_US
dc.subject	Ultrathin gate	en_US
dc.subject	Oxided layer	en_US
dc.subject	Charging damage	en_US
dc.subject	Deep submicrometer	en_US
dc.subject	Photo resistance	en_US
dc.subject	Ashing	en_US
dc.title	電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究	zh_TW
dc.title	Study of Plasma Antenna Effect in Ultrathin Gate Oxides	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學毫微米實驗室	zh_TW
Appears in Collections:	Research Plans

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