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dc.contributor.author林鴻志en_US
dc.contributor.authorHORNG-CHIHLINen_US
dc.date.accessioned2014-12-13T10:37:06Z-
dc.date.available2014-12-13T10:37:06Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E317-005zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94383-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=428978&docId=76777en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject天線效應zh_TW
dc.subject電漿製程zh_TW
dc.subject超薄閘zh_TW
dc.subject氧化層zh_TW
dc.subject充電損害zh_TW
dc.subject深次微米zh_TW
dc.subject光阻zh_TW
dc.subject灰化zh_TW
dc.subjectAntenna effecten_US
dc.subjectPlasma processen_US
dc.subjectUltrathin gateen_US
dc.subjectOxided layeren_US
dc.subjectCharging damageen_US
dc.subjectDeep submicrometeren_US
dc.subjectPhoto resistanceen_US
dc.subjectAshingen_US
dc.title電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究zh_TW
dc.titleStudy of Plasma Antenna Effect in Ultrathin Gate Oxidesen_US
dc.typePlanen_US
dc.contributor.department國立交通大學毫微米實驗室zh_TW
顯示於類別:研究計畫


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