| 標題: | 第三、五族雜質在矽、鍺晶面上氣相生長之原子與電子結構研究 Atomic Level Investigation of Boron and Phosphorus Chemical Vapor Deposition on Si, Ge Surfaces |
| 作者: | 林登松 DENG-SUNGLIN 交通大學物理研究所 |
| 關鍵字: | 半導體;雜質;化學氣相沈積;表面物理;Semiconductor;Impurity;Chemical vapor deposition (CVD);Surface physics |
| 公開日期: | 1999 |
| 官方說明文件#: | NSC88-2112-M009-005 |
| URI: | http://hdl.handle.net/11536/94413 https://www.grb.gov.tw/search/planDetail?id=426144&docId=76091 |
| Appears in Collections: | Research Plans |
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