BESOI的新製程

Full metadata record

DC Field	Value	Language
dc.contributor.author	荊鳳德	en_US
dc.contributor.author	CHIN ALBERT	en_US
dc.date.accessioned	2014-12-13T10:37:10Z	-
dc.date.available	2014-12-13T10:37:10Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-032	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94444	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=444170&docId=80434	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	高速元件	zh_TW
dc.subject	矽絕緣體	zh_TW
dc.subject	無線通訊	zh_TW
dc.subject	多處理單元	zh_TW
dc.subject	金氧半場效電晶體	zh_TW
dc.subject	High speed device	en_US
dc.subject	SOI	en_US
dc.subject	Wireless communication	en_US
dc.subject	Multi-processing-unit	en_US
dc.subject	MOSFET	en_US
dc.subject	BESOI	en_US
dc.title	BESOI的新製程	zh_TW
dc.title	Innovative Process of BESOI	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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