化學氣相沈積氧化鉭在Noble金屬電極之動態隨機存取記憶體電容器之研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	羅正忠	en_US
dc.date.accessioned	2014-12-13T10:37:11Z	-
dc.date.available	2014-12-13T10:37:11Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-035	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94447	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=444202&docId=80442	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氧化鉭	zh_TW
dc.subject	動態隨機存取記憶體	zh_TW
dc.subject	化學氣相沈積法	zh_TW
dc.subject	記憶體元件	zh_TW
dc.subject	電容器	zh_TW
dc.subject	Tantalum oxide	en_US
dc.subject	DRAM	en_US
dc.subject	CVD	en_US
dc.subject	Memory device	en_US
dc.subject	Capacitor	en_US
dc.title	化學氣相沈積氧化鉭在Noble金屬電極之動態隨機存取記憶體電容器之研究	zh_TW
dc.title	Study of CVD Ta205 on Noble Metal Electrode for High-Density DRAM Capacitors	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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