標題: Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells
作者: Hsu, Chih-Chang
Lin, Ja-Hon
Chen, Ying-Shu
Lin, Ying-Hsiu
Kuo, Hao-Chung
Wang, Shing-Chung
Hsieh, Wen-Feng
Tansu, Nelson
Mawst, Luke J.
光電工程學系
Department of Photonics
公開日期: 21-四月-2008
摘要: Striking differences in differential reflectance and carrier relaxation in In(0.4)Ga(0.6)As and In(0.4)Ga(0.6)As(0.98)N(0.02) single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 angstrom within 3000 angstrom wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier - carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the carrier dynamics is strongly affected by N incorporation that causes local defects in InGaAsN SQWs to reduce the carrier relaxation.
URI: http://dx.doi.org/10.1088/0022-3727/41/8/085107
http://hdl.handle.net/11536/9444
ISSN: 0022-3727
DOI: 10.1088/0022-3727/41/8/085107
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 41
Issue: 8
結束頁: 
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