標題: 極平整之超薄氧化層
Atomically Smooth Ultrathin Oxide
作者: 蔡中
交通大學電子工程系
關鍵字: 超薄;氧化層;二氧化矽;半導體;閘極氧化層;Ultrathin;Oxidation layer;SiO2;Semiconductor;Gate oxide
公開日期: 1999
官方說明文件#: NSC88-2215-E009-033
URI: http://hdl.handle.net/11536/94456
https://www.grb.gov.tw/search/planDetail?id=444364&docId=80480
Appears in Collections:Research Plans


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