砷化銦/砷化鋁銦應力補償之高速電晶體

標題:	砷化銦/砷化鋁銦應力補償之高速電晶體 InAs/InAlAs Strain-Compensated Pseudomorphic HEMT
作者:	蔡中交通大學電子工程系
關鍵字:	應力補償;高速電晶體;砷化銦;砷化鋁銦;量子井;Strain compensatation;High speed transistor;InAs;InAlAs;Quantum well
公開日期:	1999
官方說明文件#:	NSC88-2215-E009-058
URI:	http://hdl.handle.net/11536/94528 https://www.grb.gov.tw/search/planDetail?id=444591&docId=80530
Appears in Collections:	Research Plans

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