Title: 銅化學氣相沈積技術及在深次微米積體電路之應用研究(II)
Cu-CVD Technology and Reliability Issues of Cu Metallization Relevant to ULSI Application(II)
Authors: 陳茂傑
交通大學電子工程系
Keywords: 銅化學氣相沈積法;深次微米;積體電路;擴散障礙;鈍化;Cu-CVD;Deep submicrometer;IC;Diffusion barrier;Passivation
Issue Date: 1999
Gov't Doc #: NSC88-2215-E009-044
URI: http://hdl.handle.net/11536/94531
https://www.grb.gov.tw/search/planDetail?id=444194&docId=80440
Appears in Collections:Research Plans