Title: 銅化學氣相沈積技術及積體電路銅製程相關的材料與製程技術研究
Cu-CVD Technology and Reliability Issues of Cu Metallization Relevant to ULSI Application
Authors: 陳茂傑
交通大學電子工程系
Keywords: 銅化學氣相沈積;孔槽填充技術;銅﹧介電材料系統之熱穩定性;鉭基障礙層;銅膜表面鈍化;Cu-CVD;Via/trench filling;Thermal stability of Cu/dielectric;Ta-based barrier;Passivation of Cu
Issue Date: 2000
Gov't Doc #: NSC89-2215-E009-029
URI: http://hdl.handle.net/11536/92852
https://www.grb.gov.tw/search/planDetail?id=528098&docId=96282
Appears in Collections:Research Plans