Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 陳茂傑 | en_US |
| dc.date.accessioned | 2014-12-13T10:37:18Z | - |
| dc.date.available | 2014-12-13T10:37:18Z | - |
| dc.date.issued | 1999 | en_US |
| dc.identifier.govdoc | NSC88-2215-E009-044 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/94531 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=444194&docId=80440 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 銅化學氣相沈積法 | zh_TW |
| dc.subject | 深次微米 | zh_TW |
| dc.subject | 積體電路 | zh_TW |
| dc.subject | 擴散障礙 | zh_TW |
| dc.subject | 鈍化 | zh_TW |
| dc.subject | Cu-CVD | en_US |
| dc.subject | Deep submicrometer | en_US |
| dc.subject | IC | en_US |
| dc.subject | Diffusion barrier | en_US |
| dc.subject | Passivation | en_US |
| dc.title | 銅化學氣相沈積技術及在深次微米積體電路之應用研究(II) | zh_TW |
| dc.title | Cu-CVD Technology and Reliability Issues of Cu Metallization Relevant to ULSI Application(II) | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| Appears in Collections: | Research Plans | |
