標題: 氮化鎵族光電材料與元件之研發---子計畫II:氮化鎵族光電元件製程之開發(I)
Development of Fabrication Process for Nitride-Based Optoelectronic Devices (I)
作者: 王興宗
交通大學光電工程研究所
關鍵字: 氮化鎵;光電元件;製造程序;GaN;Optoelectronic device;Fabrication process
公開日期: 1999
官方說明文件#: NSC88-2215-E009-022
URI: http://hdl.handle.net/11536/94715
https://www.grb.gov.tw/search/planDetail?id=461758&docId=84663
Appears in Collections:Research Plans


Files in This Item:

  1. 882215E009022.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.