完整後設資料紀錄
DC 欄位語言
dc.contributor.author林鵬en_US
dc.contributor.authorLIN PANGen_US
dc.date.accessioned2014-12-13T10:37:38Z-
dc.date.available2014-12-13T10:37:38Z-
dc.date.issued1998en_US
dc.identifier.govdocNSC87-2215-E009-073zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94785-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=409130&docId=72441en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject動態隨機存取記憶體zh_TW
dc.subject介電常數zh_TW
dc.subject薄膜zh_TW
dc.subject電容zh_TW
dc.subject濺鍍zh_TW
dc.subject製程zh_TW
dc.subjectDRMen_US
dc.subjectDielectric constanten_US
dc.subjectThin filmen_US
dc.subjectCapacitorsen_US
dc.subjectSputteringen_US
dc.subjectProcessen_US
dc.title隨機記憶體用高介電薄膜電容之研發zh_TW
dc.titleHigh Dielectric Thin Film Capacitor for DRAMen_US
dc.typePlanen_US
dc.contributor.department交通大學材料科學與工程研究所zh_TW
顯示於類別:研究計畫