標題: 奈米金屬閘MOS元件製程技術之研發
Study of Nano Metal Gate MOS Device Technology Fabrication
作者: 葉清發
交通大學電子工程系
關鍵字: 奈米結構;金氧半導體元件;金屬閘;積體電路技術;Nanostructure;MOS device;Metal gate;IC technique
公開日期: 2001
官方說明文件#: NSC90-2215-E009-097
URI: http://hdl.handle.net/11536/94920
https://www.grb.gov.tw/search/planDetail?id=665793&docId=126396
Appears in Collections:Research Plans


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  1. 902215E009097.pdf
  2. 902215E009097.pdf

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