標題: | 奈米金屬閘MOS元件製程技術之研發 Study of Nano Metal Gate MOS Device Technology Fabrication |
作者: | 葉清發 交通大學電子工程系 |
關鍵字: | 奈米結構;金氧半導體元件;金屬閘;積體電路技術;Nanostructure;MOS device;Metal gate;IC technique |
公開日期: | 2001 |
官方說明文件#: | NSC90-2215-E009-097 |
URI: | http://hdl.handle.net/11536/94920 https://www.grb.gov.tw/search/planDetail?id=665793&docId=126396 |
Appears in Collections: | Research Plans |
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