完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, M. H.en_US
dc.contributor.authorLin, M. T.en_US
dc.contributor.authorWang, Tahuien_US
dc.date.accessioned2014-12-08T15:12:21Z-
dc.date.available2014-12-08T15:12:21Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2007.10.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/9492-
dc.description.abstractThe electromigration short-length effect in dual-damascene Cu interconnects has been investigated through experiments on lines of various lengths (L), being stressed at a variety of current densities (j), and using a technologically realistic three-level structure. This investigation represents a complete study of the short-length effect after a well-developed dual-damascene Cu process. Lifetime measurement and resistance degradation as a function of time were used to describe this phenomenon. It has been found that the sigma of log-normal distribution increased as the current density-length product decreased. The statistical distribution of the critical volume fits the sigma curve well. Lower jL(2) values show large sigma values because of back-stress-induced TTF (time-to-fail) dispersion. A simplified equation is proposed to analyze the experimental data from various combinations of current density and line length at a certain temperature. The resulting threshold-length product (jL)(C) value appears to be temperature dependent, decreasing with an increase in temperature in a range of 250-300 degrees C. (c) 2007 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEffects of length scaling on electromigration in dual-damascene copper interconnectsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2007.10.007en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume48en_US
dc.citation.issue4en_US
dc.citation.spage569en_US
dc.citation.epage577en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000256454300011-
dc.citation.woscount9-
顯示於類別:期刊論文


文件中的檔案:

  1. 000256454300011.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。