單電荷與輻射效應在先進CMOS 和SONOS 元件可靠性之統計量測與模式

Full metadata record

DC Field	Value	Language
dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.date.accessioned	2014-12-13T10:38:06Z	-
dc.date.available	2014-12-13T10:38:06Z	-
dc.date.issued	2014	en_US
dc.identifier.govdoc	NSC102-2221-E009-173-MY3	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/95053	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=8109484&docId=429387	en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	單電荷與輻射效應在先進CMOS 和SONOS 元件可靠性之統計量測與模式	zh_TW
dc.title	Statistical Models and Characterization of Single Charge Phenomena and Irradiation Effects in Advanced CMOS and SONOS Devices	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans