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dc.contributor.authorLee, Y. C.en_US
dc.contributor.authorLee, C. E.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:12:22Z-
dc.date.available2014-12-08T15:12:22Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/23/4/045013en_US
dc.identifier.urihttp://hdl.handle.net/11536/9509-
dc.description.abstractSmall-scale GaN-based LEDs with a single electrode pad enjoying such properties as low cost, low series resistance, high efficiency and high yield were fabricated on a sapphire substrate by a novel and simple method. The devices present not only lower series resistance but higher light output power due to a specific n-contact design and better current spreading properties. Furthermore, higher ESD resistance (> -800 V at machine-mode operation) was demonstrated. The single-pad electrode of small-scale GaN-based LEDs has a chip size of 180 x 180 mu m(2), and showed a lower forward voltage of 3.15 V and 53.4% output power enhancement at 20 mA.en_US
dc.language.isoen_USen_US
dc.titleSmall GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/23/4/045013en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume23en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000254386300013-
dc.citation.woscount1-
Appears in Collections:Articles


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