Full metadata record
DC FieldValueLanguage
dc.contributor.authorTsai, Chun-Yinen_US
dc.contributor.authorKuo, Wei-Tingen_US
dc.contributor.authorLin, Chi-Baoen_US
dc.contributor.authorChen, Tsung-Linen_US
dc.date.accessioned2014-12-08T15:12:23Z-
dc.date.available2014-12-08T15:12:23Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn0960-1317en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0960-1317/18/4/045001en_US
dc.identifier.urihttp://hdl.handle.net/11536/9517-
dc.description.abstractThis paper presents a novel design of MEMS logic gate that can perform Boolean algebra the same as logic devices that are composed of solid-state transistors. This MEMS logic gate design inherits all the advantages from MEMS switches and thus is expected to have more applications than MEMS switches. One unique feature of this device is that it can perform either NAND gate or NOR gate functions with the same mechanical structure but with different electrical interconnects. In a prototype design, the device is 250 mu m long, 100 mu m wide and has 1 mu m gap. The experimental results show that this device can operate at 10/0 V and achieve the proposed logic functions. The resonant frequency of the device is measured roughly at 30 kHz. Due to no metal-to-metal contact in the current device, the logic functions of the design are verified through observations and video taping.en_US
dc.language.isoen_USen_US
dc.titleDesign and fabrication of MEMS logic gatesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0960-1317/18/4/045001en_US
dc.identifier.journalJOURNAL OF MICROMECHANICS AND MICROENGINEERINGen_US
dc.citation.volume18en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000254151800001-
dc.citation.woscount11-
Appears in Collections:Articles


Files in This Item:

  1. 000254151800001.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.