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dc.contributor.author曾俊元en_US
dc.contributor.authorTSEUNG-YUENTSENGen_US
dc.date.accessioned2014-12-13T10:38:17Z-
dc.date.available2014-12-13T10:38:17Z-
dc.date.issued1997en_US
dc.identifier.govdocNSC86-2221-E009-045zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/95211-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=293407&docId=53716en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject五氧化二鉭zh_TW
dc.subject低壓化學蒸鍍法zh_TW
dc.subject晶圓zh_TW
dc.subject薄膜生長zh_TW
dc.subjectTantalum pentaoxideen_US
dc.subjectLPCVDen_US
dc.subjectWaferen_US
dc.subjectThin film growthen_US
dc.title8吋矽晶圓半導體LPCVD製程設備之研發---子計畫四:利用LPCVD法成長Ta/sub 2/O/sub 5/薄膜與特性分析(I)zh_TW
dc.titleGrowth and Characterization of LPCVD Ta/sub 2/O/sub 5/ Thin Films (Ⅰ)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
顯示於類別:研究計畫