矽與矽鍺材料及元件之發展---子計畫一：矽與矽鍺材料及物理特性研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	施敏	en_US
dc.date.accessioned	2014-12-13T10:38:38Z	-
dc.date.available	2014-12-13T10:38:38Z	-
dc.date.issued	1997	en_US
dc.identifier.govdoc	NSC86-2215-E009-020	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/95567	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=293153&docId=53655	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	矽	zh_TW
dc.subject	鍺	zh_TW
dc.subject	化學氣相沈積法	zh_TW
dc.subject	化學分子束磊晶	zh_TW
dc.subject	超晶格	zh_TW
dc.subject	量子霍耳效應	zh_TW
dc.subject	Silicon	en_US
dc.subject	Germanium	en_US
dc.subject	Chemical vapor deposition (CVD)	en_US
dc.subject	Chemical molecular epitaxy (CME)	en_US
dc.subject	Superlattice	en_US
dc.subject	Quantum hall effect	en_US
dc.title	矽與矽鍺材料及元件之發展---子計畫一：矽與矽鍺材料及物理特性研究	zh_TW
dc.title	The Study of Si/SiGe Material and Physical Characterization	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
顯示於類別：	研究計畫