Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 陳茂傑 | en_US |
| dc.date.accessioned | 2014-12-13T10:38:39Z | - |
| dc.date.available | 2014-12-13T10:38:39Z | - |
| dc.date.issued | 1997 | en_US |
| dc.identifier.govdoc | NSC86-2215-E009-040 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/95593 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=278865&docId=50212 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 銅 | zh_TW |
| dc.subject | 化學氣相沉積 | zh_TW |
| dc.subject | 擴散障壁材料 | zh_TW |
| dc.subject | 惰化 | zh_TW |
| dc.subject | 深次微米 | zh_TW |
| dc.subject | Cu | en_US |
| dc.subject | CVD | en_US |
| dc.subject | Barrier metal | en_US |
| dc.subject | Passivation | en_US |
| dc.subject | Deep submicron | en_US |
| dc.title | 銅的化學氣相沉積技術及其在深次微米積體電路之應用的研究(II) | zh_TW |
| dc.title | Cu-CVD Technology and Reliability Issues of Cu Metallization Relevant to ULSI Application (Ⅱ) | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| Appears in Collections: | Research Plans | |
