完整後設資料紀錄
DC 欄位語言
dc.contributor.author陳茂傑en_US
dc.date.accessioned2014-12-13T10:38:39Z-
dc.date.available2014-12-13T10:38:39Z-
dc.date.issued1997en_US
dc.identifier.govdocNSC86-2215-E009-040zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/95593-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=278865&docId=50212en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subjectzh_TW
dc.subject化學氣相沉積zh_TW
dc.subject擴散障壁材料zh_TW
dc.subject惰化zh_TW
dc.subject深次微米zh_TW
dc.subjectCuen_US
dc.subjectCVDen_US
dc.subjectBarrier metalen_US
dc.subjectPassivationen_US
dc.subjectDeep submicronen_US
dc.title銅的化學氣相沉積技術及其在深次微米積體電路之應用的研究(II)zh_TW
dc.titleCu-CVD Technology and Reliability Issues of Cu Metallization Relevant to ULSI Application (Ⅱ)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
顯示於類別:研究計畫