| Title: | 銅的化學氣相沉積技術及其在深次微米積體電路之應用的研究(II) Cu-CVD Technology and Reliability Issues of Cu Metallization Relevant to ULSI Application (Ⅱ) |
| Authors: | 陳茂傑 交通大學電子工程系 |
| Keywords: | 銅;化學氣相沉積;擴散障壁材料;惰化;深次微米;Cu;CVD;Barrier metal;Passivation;Deep submicron |
| Issue Date: | 1997 |
| Gov't Doc #: | NSC86-2215-E009-040 |
| URI: | http://hdl.handle.net/11536/95593 https://www.grb.gov.tw/search/planDetail?id=278865&docId=50212 |
| Appears in Collections: | Research Plans |
