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單晶CVD薄膜和熔化成長法製成中之不穩定熱流與使其穩定之研究---子計畫二:薄膜單晶成長之垂直式CVD反應器內流動與熱傳之數值研究 (I)
單晶CVD薄膜和熔化成長法製成中之不穩定熱流與使其穩定之研究---子計畫二:薄膜單晶成長之垂直式CVD反應器內流動與熱傳之數值研究 (I)
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Date
1996
Authors
崔燕勇
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Keywords
化學蒸汽堆積法
,
薄膜單晶成長
,
數值模擬
,
Chemical vapor deposition
,
Thin film single crystal growth
,
Numericalsimulation
Citation
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https://www.grb.gov.tw/search/planDetail?id=230694&docId=41961
https://ir.lib.nycu.edu.tw/handle/11536/95782
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