金氧半電晶體內界面缺陷所產生汲極漏電流的物理機制與實驗量測

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.date.accessioned	2014-12-13T10:38:51Z	-
dc.date.available	2014-12-13T10:38:51Z	-
dc.date.issued	1996	en_US
dc.identifier.govdoc	NSC85-2215-E009-050	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/95790	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=230199&docId=41827	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	界面缺陷	zh_TW
dc.subject	汲極漏電流	zh_TW
dc.subject	物理機制	zh_TW
dc.subject	模擬	zh_TW
dc.subject	金氧半場效電晶體	zh_TW
dc.subject	Interface trap	en_US
dc.subject	Drain leakage current	en_US
dc.subject	Physical mechanism	en_US
dc.subject	Simulation	en_US
dc.subject	MOSFET	en_US
dc.title	金氧半電晶體內界面缺陷所產生汲極漏電流的物理機制與實驗量測	zh_TW
dc.title	Mechanisms and Characterization of Interface Trap Induced Drain Leakage Current in Si n-MOSFET's	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
顯示於類別：	研究計畫