標題: Intense terahertz emission from a-plane InN surface
作者: Ahn, H.
Ku, Y. -P.
Chuang, C. -H.
Pan, C. -L.
Lin, H. -W.
Hong, Y. -L.
Gwo, S.
光電工程學系
Department of Photonics
公開日期: 10-Mar-2008
摘要: We report a significant enhancement in terahertz emission from the indium nitride (InN) films grown along the a axis (a-plane InN), relative to the InN films grown along the c axis. The primary radiation mechanism of the a-plane InN film is found to be due to the acceleration of photoexcited carriers under the polarization-induced in-plane electric field perpendicular to the a axis, which effectively enhances the geometrical coupling of the radiation out of semiconductor. In addition, azimuthal angle dependence measurement shows that the p-polarized terahertz output consists of a large angularly independent component and a weak component with a distinctive fourfold rotation symmetry. (c) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2892655
http://hdl.handle.net/11536/9580
ISSN: 0003-6951
DOI: 10.1063/1.2892655
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 10
結束頁: 
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